NPN transistor PDTC144ET, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). FT: kHz. Function: Transistor with built-in bias resistor. Ic(pulse): 100mA. Marking on the case: *08. Minimum hFE gain: 80. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.15V. Semiconductor material: silicon. Spec info: screen printing/SMD code P08/T08. Type of transistor: NPN. Vcbo: 50V. Vebo: 10V. Original product from manufacturer: Philips Semiconductors. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 13:03