NPN transistor PBSS4041NX, 6.2A, SOT-89, SOT-89, 60V

NPN transistor PBSS4041NX, 6.2A, SOT-89, SOT-89, 60V

Quantity
Unit price
1-4
1.19$
5-24
1.03$
25-49
0.92$
50-99
0.85$
100+
0.76$
Quantity in stock: 98

NPN transistor PBSS4041NX, 6.2A, SOT-89, SOT-89, 60V. Collector current: 6.2A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 60V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 35pF. FT: 130 MHz. Function: High-Current Switching, low-saturation voltage. Ic(pulse): 15A. Marking on the case: 6F. Max hFE gain: 500. Maximum saturation voltage VCE(sat): 320mV. Minimum hFE gain: 75. Note: complementary transistor (pair) PBSS4041PX. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.6W. Quantity per case: 1. Saturation voltage VCE(sat): 35mV. Semiconductor material: silicon. Spec info: screen printing/SMD code 6F. Tf (type): 220 ns. Type of transistor: NPN. Vcbo: 60V. Vebo: 5V. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 11/08/2025, 21:30

Technical documentation (PDF)
PBSS4041NX
27 parameters
Collector current
6.2A
Housing
SOT-89
Housing (according to data sheet)
SOT-89
Collector/emitter voltage Vceo
60V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Cost)
35pF
FT
130 MHz
Function
High-Current Switching, low-saturation voltage
Ic(pulse)
15A
Marking on the case
6F
Max hFE gain
500
Maximum saturation voltage VCE(sat)
320mV
Minimum hFE gain
75
Note
complementary transistor (pair) PBSS4041PX
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.6W
Quantity per case
1
Saturation voltage VCE(sat)
35mV
Semiconductor material
silicon
Spec info
screen printing/SMD code 6F
Tf (type)
220 ns
Type of transistor
NPN
Vcbo
60V
Vebo
5V
Original product from manufacturer
Nxp Semiconductors