NPN transistor MUN2212, 0.1A, SOT-23 ( TO-236 ), SC-59 ( 2.9x1.5x1.15mm ), 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SC-59 ( 2.9x1.5x1.15mm ). Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. FT: kHz. Function: transistor with bias resistor network. Marking on the case: 8B. Max hFE gain: 100. Minimum hFE gain: 60. Note: B1GBCFLL0035. Number of terminals: 3. Pd (Power Dissipation, Max): 338mW. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: screen printing/SMD code 8B. Technology: Digital Transistors (BRT). Temperature: +150°C. Type of transistor: NPN. Vcbo: 50V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 11/08/2025, 21:30