NPN-Transistor MPSA64, TO-92, 0.5A, TO-92, 30 v

NPN-Transistor MPSA64, TO-92, 0.5A, TO-92, 30 v

Quantity
Unit price
1-4
0.19$
5-49
0.15$
50-99
0.13$
100-199
0.12$
200+
0.10$
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Quantity in stock: 87

NPN-Transistor MPSA64, TO-92, 0.5A, TO-92, 30 v. Housing: TO-92. Collector current: 0.5A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 500mA. Darlington transistor?: yes. FT: 125 MHz. Max hFE gain: 20000. Minimum hFE gain: 5000. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power dissipation: 0.625W. Quantity per case: 2. RoHS: yes. Saturation voltage VCE(sat): 1.5V. Semiconductor material: silicon. Type of transistor: PNP. Vcbo: 30 v. Vebo: 10V. Voltage (collector - emitter): 30V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
MPSA64
26 parameters
Housing
TO-92
Collector current
0.5A
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
30 v
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector current Ic [A]
500mA
Darlington transistor?
yes
FT
125 MHz
Max hFE gain
20000
Minimum hFE gain
5000
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Polarity
bipolar
Power dissipation
0.625W
Quantity per case
2
RoHS
yes
Saturation voltage VCE(sat)
1.5V
Semiconductor material
silicon
Type of transistor
PNP
Vcbo
30 v
Vebo
10V
Voltage (collector - emitter)
30V
Original product from manufacturer
ON Semiconductor