NPN transistor MPSA14, TO-92, 500mA, TO-92, 30 v

NPN transistor MPSA14, TO-92, 500mA, TO-92, 30 v

Quantity
Unit price
1-4
0.28$
5-49
0.23$
50-99
0.20$
100-199
0.18$
200+
0.16$
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Quantity in stock: 165

NPN transistor MPSA14, TO-92, 500mA, TO-92, 30 v. Housing: TO-92. Collector current: 500mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 500mA. Darlington transistor?: yes. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Maximum saturation voltage VCE(sat): 1.5V. Minimum hFE gain: 10000. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Technology: Darlington transistor. Type of transistor: NPN. Vcbo: 30 v. Vebo: 10V. Voltage (collector - emitter): 30V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 11/08/2025, 21:30

MPSA14
28 parameters
Housing
TO-92
Collector current
500mA
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
30 v
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector current Ic [A]
500mA
Darlington transistor?
yes
FT
125 MHz
Function
general purpose
Max hFE gain
20000
Maximum saturation voltage VCE(sat)
1.5V
Minimum hFE gain
10000
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Polarity
bipolar
Power
0.625W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Technology
Darlington transistor
Type of transistor
NPN
Vcbo
30 v
Vebo
10V
Voltage (collector - emitter)
30V
Original product from manufacturer
ON Semiconductor