NPN transistor MMBT5551LT1G, SOT-23, 600mA

NPN transistor MMBT5551LT1G, SOT-23, 600mA

Quantity
Unit price
1-99
0.21$
100-999
0.11$
1000-2999
0.0610$
3000+
0.0515$
Quantity in stock: 8835

NPN transistor MMBT5551LT1G, SOT-23, 600mA. Housing: SOT-23. Collector current Ic [A], max.: 600mA. Collector-emitter voltage Uceo [V]: 160V. Component family: NPN transistor. Configuration: surface-mounted component (SMD). Cutoff frequency ft [MHz]: 100 MHz. Housing (JEDEC standard): TO-236. Manufacturer's marking: G1. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.225W. Number of terminals: 3. RoHS: yes. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/08/2025, 21:30

Technical documentation (PDF)
MMBT5551LT1G
13 parameters
Housing
SOT-23
Collector current Ic [A], max.
600mA
Collector-emitter voltage Uceo [V]
160V
Component family
NPN transistor
Configuration
surface-mounted component (SMD)
Cutoff frequency ft [MHz]
100 MHz
Housing (JEDEC standard)
TO-236
Manufacturer's marking
G1
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.225W
Number of terminals
3
RoHS
yes
Original product from manufacturer
Onsemi