NPN-Transistor MMBT4403LT1G, SOT-23 ( TO-236 ), 0.6A, SOT-23 ( TO236 ), 40V. Housing: SOT-23 ( TO-236 ). Collector current: 0.6A. Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Collector current Ic [A]: 0.6A. 600mA. Conditioning unit: 3000. FT: 200 MHz. Marking on the case: 2T. Max hFE gain: 300. Minimum hFE gain: 30. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.3W. Polarity: bipolar. Power: 225mW. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Tf(max): 30 ns. Type of transistor: PNP. Vcbo: 40V. Vebo: 5V. Voltage (collector - emitter): 40V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 18:37