NPN transistor MMBT2907ALT1G, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 60V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 1.6pF. FT: 200 MHz. Ic(pulse): 1.2A. Marking on the case: 2F. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 225mW. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: SMD '2F'. Type of transistor: NPN. Vcbo: 60V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 18:37