| Quantity in stock: 11 |
NPN transistor MJW3281AG, 15A, TO-247, TO-247, 230V
Quantity
Unit price
1-4
4.74$
5-14
4.14$
15-29
3.74$
30-59
3.46$
60+
3.07$
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| Equivalence available | |
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NPN transistor MJW3281AG, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 2.8pF. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Ic(pulse): 25A. Max hFE gain: 200. Minimum hFE gain: 50. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 200W. Production date: 201444 201513. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJW1302A. Technology: Power Bipolar Transistor. Type of transistor: NPN. Vcbo: 230V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27
MJW3281AG
27 parameters
Collector current
15A
Housing
TO-247
Housing (according to data sheet)
TO-247
Collector/emitter voltage Vceo
230V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
2.8pF
FT
30 MHz
Function
Complementary Bipolar Power Transistor
Ic(pulse)
25A
Max hFE gain
200
Minimum hFE gain
50
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
200W
Production date
201444 201513
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.4V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJW1302A
Technology
Power Bipolar Transistor
Type of transistor
NPN
Vcbo
230V
Vebo
5V
Original product from manufacturer
ON Semiconductor
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