NPN-Transistor MJW1302AG, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Ic(pulse): 25A. Max hFE gain: 200. Minimum hFE gain: 50. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 200W. Production date: 201446. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJW3281A. Technology: Power Bipolar Transistor. Type of transistor: PNP. Vcbo: 230V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27