NPN-Transistor MJL4302A, 15A, TO-264 ( TOP-3L ), TO-264, 350V

NPN-Transistor MJL4302A, 15A, TO-264 ( TOP-3L ), TO-264, 350V

Quantity
Unit price
1-4
9.07$
5-9
8.27$
10-24
7.64$
25-49
7.19$
50+
6.51$
Quantity in stock: 9

NPN-Transistor MJL4302A, 15A, TO-264 ( TOP-3L ), TO-264, 350V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 350V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Conditioning unit: 25. Conditioning: plastic tube. FT: 35 MHz. Function: Power audio, Low Harmonic Distortion. Ic(pulse): 30A. Max hFE gain: 250. Minimum hFE gain: 50. Number of terminals: 3. Operating temperature: -60...+150°C. Pd (Power Dissipation, Max): 230W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJL4281A. Technology: Silicon Power Bipolar Transistor. Type of transistor: PNP. Vcbo: 350V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
MJL4302A
27 parameters
Collector current
15A
Housing
TO-264 ( TOP-3L )
Housing (according to data sheet)
TO-264
Collector/emitter voltage Vceo
350V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Conditioning unit
25
Conditioning
plastic tube
FT
35 MHz
Function
Power audio, Low Harmonic Distortion
Ic(pulse)
30A
Max hFE gain
250
Minimum hFE gain
50
Number of terminals
3
Operating temperature
-60...+150°C
Pd (Power Dissipation, Max)
230W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJL4281A
Technology
Silicon Power Bipolar Transistor
Type of transistor
PNP
Vcbo
350V
Vebo
5V
Original product from manufacturer
ON Semiconductor