| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
NPN-Transistor MJL21193, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V
Quantity
Unit price
1-4
7.79$
5-9
6.93$
10-24
6.29$
25-49
5.74$
50+
5.10$
| +25 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Equivalence available | |
| Quantity in stock: 142 |
NPN-Transistor MJL21193, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 500pF. FT: 4 MHz. Function: hFE=25 Min @ IC =8Adc. Ic(pulse): 30A. Max hFE gain: 75. Minimum hFE gain: 25. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJL21194. Type of transistor: PNP. Vcbo: 400V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27
MJL21193
25 parameters
Collector current
16A
Housing
TO-264 ( TOP-3L )
Housing (according to data sheet)
TO–3PBL
Collector/emitter voltage Vceo
250V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
500pF
FT
4 MHz
Function
hFE=25 Min @ IC =8Adc
Ic(pulse)
30A
Max hFE gain
75
Minimum hFE gain
25
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
200W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1.4V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJL21194
Type of transistor
PNP
Vcbo
400V
Vebo
5V
Original product from manufacturer
ON Semiconductor