NPN-Transistor MJL1302A, 15A, TO-264 ( TOP-3L ), TO-264, 260V

NPN-Transistor MJL1302A, 15A, TO-264 ( TOP-3L ), TO-264, 260V

Quantity
Unit price
1-4
7.78$
5-24
7.20$
25-49
6.74$
50-99
6.35$
100+
5.65$
Equivalence available
Quantity in stock: 83

NPN-Transistor MJL1302A, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Conditioning unit: 25. Conditioning: plastic tube. Cost): 1.7pF. FT: 30 MHz. Function: hFE 45(min). Ic(pulse): 25A. Max hFE gain: 150. Minimum hFE gain: 45. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJL3281A. Type of transistor: PNP. Vcbo: 260V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
MJL1302A
27 parameters
Collector current
15A
Housing
TO-264 ( TOP-3L )
Housing (according to data sheet)
TO-264
Collector/emitter voltage Vceo
260V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Conditioning unit
25
Conditioning
plastic tube
Cost)
1.7pF
FT
30 MHz
Function
hFE 45(min)
Ic(pulse)
25A
Max hFE gain
150
Minimum hFE gain
45
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
200W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
3V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJL3281A
Type of transistor
PNP
Vcbo
260V
Vebo
5V
Original product from manufacturer
ON Semiconductor

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