NPN-Transistor MJE350G, -300V, TO-126, -0.5A, TO-225, 300V, 500mA
Quantity
Unit price
1-99
1.12$
100+
0.70$
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NPN-Transistor MJE350G, -300V, TO-126, -0.5A, TO-225, 300V, 500mA. Collector-Emitter Voltage VCEO: -300V. Housing: TO-126. Collector current: -0.5A. Housing (JEDEC standard): TO-225. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: -. Manufacturer's marking: MJE350G. Max frequency: 10MHz. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 20W. Number of terminals: 3. Polarity: PNP. Power: 20W. RoHS: yes. Type of transistor: Power Transistor. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/02/2025, 23:50
MJE350G
18 parameters
Collector-Emitter Voltage VCEO
-300V
Housing
TO-126
Collector current
-0.5A
Housing (JEDEC standard)
TO-225
Collector-emitter voltage Uceo [V]
300V
Collector current Ic [A], max.
500mA
Component family
high voltage PNP transistor
Configuration
PCB through-hole mounting
Manufacturer's marking
MJE350G
Max frequency
10MHz
Max temperature
+150°C.
Maximum dissipation Ptot [W]
20W
Number of terminals
3
Polarity
PNP
Power
20W
RoHS
yes
Type of transistor
Power Transistor
Original product from manufacturer
Onsemi