NPN-Transistor MJE350, TO-126 (TO-225, SOT-32), 0.5A, TO-126, -300V, 300V, 500mA, TO-126, 300V. Housing: TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (JEDEC standard): TO-126. Collector-Emitter Voltage VCEO: -300V. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 0.5A. 500mA. Collector-Base Voltage VCBO: -300V. Component family: high voltage PNP transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 30. FT: 10 MHz. Function: -. Information: -. MSL: -. Manufacturer's marking: MJE350. Max hFE gain: 240. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 20W. Minimum hFE gain: 30. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 20W. Polarity: bipolar. Power: 20W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Series: MJE350. Spec info: complementary transistor (pair) MJE340. Type of transistor: PNP. Type: Switching. Vcbo: 300V. Vebo: 3V. Voltage (collector - emitter): 4.87k Ohms. Original product from manufacturer: Cdil. Quantity in stock updated on 10/31/2025, 09:27