| +192 quickly | |
| Quantity in stock: 62 |
NPN transistor MJE3055T-FAI, 10A, TO-220, TO-220AB, 60V
Quantity
Unit price
1-4
0.88$
5-24
0.74$
25-49
0.64$
50-99
0.59$
100+
0.50$
| Equivalence available | |
| Quantity in stock: 46 |
NPN transistor MJE3055T-FAI, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Conditioning unit: 50. Conditioning: plastic tube. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE2955T. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Vcbo: 70V. Vebo: 5V. Original product from manufacturer: Fairchild. Quantity in stock updated on 11/08/2025, 21:30
MJE3055T-FAI
26 parameters
Collector current
10A
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Collector/emitter voltage Vceo
60V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Conditioning unit
50
Conditioning
plastic tube
FT
2 MHz
Function
NF-L
Max hFE gain
70
Minimum hFE gain
20
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
75W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1.1V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJE2955T
Technology
'Epitaxial-Base'
Type of transistor
NPN
Vcbo
70V
Vebo
5V
Original product from manufacturer
Fairchild