NPN-Transistor MJE2955T, TO-220, -70V, 10A, TO-220AB, 60V, 10A, TO-220AB, 60V. Housing: TO-220. Collector-Emitter Voltage VCEO: -70V. Collector current: 10A. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 10A. Component family: PNP power transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 2 MHz. FT: 2 MHz. Function: NF-L. Manufacturer's marking: MJE2955T. Max frequency: 4MHz. Max hFE gain: 70. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 75W. Maximum saturation voltage VCE(sat): 8V. Minimum hFE gain: 20. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 75W. Polarity: bipolar. Power: 90W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE3055T. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Vcbo: 70V. Vebo: 5V. Voltage (collector - emitter): 70V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:27