NPN transistor MJE200G, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 80pF. FT: 65MHz. Function: -. Max hFE gain: 180. Maximum saturation voltage VCE(sat): 1.8V. Minimum hFE gain: 45. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 15W. Quantity per case: 1. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE210. Type of transistor: NPN. Vcbo: 25V. Vebo: 8V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 11/08/2025, 21:30