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NPN-Transistor MJE15031G, -150V, TO-220, 8A, TO-220AB, 150V
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NPN-Transistor MJE15031G, -150V, TO-220, 8A, TO-220AB, 150V. Collector-Emitter Voltage VCEO: -150V. Housing: TO-220. Collector current: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 30MHz. CE diode: no. Collector-Base Voltage VCBO: -150V. Conditioning unit: 50. Conditioning: plastic tube. Current Max 1: -8A. DC Collector/Base Gain hFE min.: 20. FT: 30 MHz. Function: for audio amplifier. Ic(pulse): 16A. Information: -. MSL: -. Max frequency: 30MHz. Max hFE gain: 40. Minimum hFE gain: 20. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 50W. Polarity: PNP. Power: 50W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.5V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE15030G. Type of transistor: PNP. Type: Power. Vcbo: 150V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 08:52