NPN-Transistor MJ15004G, TO-3 ( TO-204 ), 20A, TO-204AA, -140V, 140V, 20A, TO-3, 140V

NPN-Transistor MJ15004G, TO-3 ( TO-204 ), 20A, TO-204AA, -140V, 140V, 20A, TO-3, 140V

Quantity
Unit price
1-4
11.15$
5-9
10.28$
10-24
9.60$
25-49
9.01$
50+
8.22$
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Quantity in stock: 3

NPN-Transistor MJ15004G, TO-3 ( TO-204 ), 20A, TO-204AA, -140V, 140V, 20A, TO-3, 140V. Housing: TO-3 ( TO-204 ). Collector current: 20A. Housing (JEDEC standard): TO-204AA. Collector-Emitter Voltage VCEO: -140V. Collector-emitter voltage Uceo [V]: 140V. Collector current Ic [A], max.: 20A. Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 140V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: 70. Bandwidth MHz: 2MHz. CE diode: no. Collector-Base Voltage VCBO: -140V. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Current Max 1: -20A. Cutoff frequency ft [MHz]: 2 MHz. DC Collector/Base Gain hFE min.: 25. FT: 2 MHz. Function: Power Transistor. Information: -. MSL: -. Manufacturer's marking: MJ15004G. Max frequency: 2MHz. Max hFE gain: 150. Max temperature: +200°C.. Maximum dissipation Ptot [W]: 250W. Minimum hFE gain: 25. Mounting Type: Chassis Mount. Number of terminals: 2. Number of terminals: 3. Operating temperature: -65...+200°C. Pd (Power Dissipation, Max): 250W. Polarity: PNP. Power: 250W. Production date: 2015/08. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJ15003. Type of transistor: PNP. Type: Power. Vcbo: 140V. Vebo: 5V. Original product from manufacturer: Div. Quantity in stock updated on 10/31/2025, 08:52

Technical documentation (PDF)
MJ15004G
45 parameters
Housing
TO-3 ( TO-204 )
Collector current
20A
Housing (JEDEC standard)
TO-204AA
Collector-Emitter Voltage VCEO
-140V
Collector-emitter voltage Uceo [V]
140V
Collector current Ic [A], max.
20A
Housing (according to data sheet)
TO-3
Collector/emitter voltage Vceo
140V
Assembly/installation
PCB through-hole mounting
BE diode
no
BE resistor
70
Bandwidth MHz
2MHz
CE diode
no
Collector-Base Voltage VCBO
-140V
Component family
high voltage PNP transistor
Configuration
PCB through-hole mounting
Current Max 1
-20A
Cutoff frequency ft [MHz]
2 MHz
DC Collector/Base Gain hFE min.
25
FT
2 MHz
Function
Power Transistor
Manufacturer's marking
MJ15004G
Max frequency
2MHz
Max hFE gain
150
Max temperature
+200°C.
Maximum dissipation Ptot [W]
250W
Minimum hFE gain
25
Mounting Type
Chassis Mount
Number of terminals
2
Number of terminals
3
Operating temperature
-65...+200°C
Pd (Power Dissipation, Max)
250W
Polarity
PNP
Power
250W
Production date
2015/08
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJ15003
Type of transistor
PNP
Type
Power
Vcbo
140V
Vebo
5V
Original product from manufacturer
Div