NPN-Transistor MJ11015G, TO-3 ( TO-204 ), TO-204AA, -120V, 30A, 120V, 30A, TO-3, 120V. Housing: TO-3 ( TO-204 ). Housing (JEDEC standard): TO-204AA. Collector-Emitter Voltage VCEO: -120V. Collector current: 30A. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 30A. Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 4MHz. Built-in diode: yes. CE diode: no. Collector-Base Voltage VCBO: -120V. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Current Max 1: -30A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 200. Darlington transistor?: yes. FT: 4 MHz. Function: hFE 1000 (IC=20Adc, VCE=5Vdc). Information: -. MSL: -. Manufacturer's marking: MJ11015G. Max frequency: 4MHz. Max temperature: +200°C.. Maximum dissipation Ptot [W]: 200W. Minimum hFE gain: 1000. Mounting Type: Chassis Mount. Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Number of terminals: 3. Operating temperature: -55...+200°C. Pd (Power Dissipation, Max): 200W. Polarity: PNP. Power: 200W. Quantity per case: 2. RoHS: yes. Saturation voltage VCE(sat): 3V. Semiconductor material: silicon. Series: MJ11015G. Spec info: complementary transistor (pair) MJ11016. Type of transistor: PNP. Type: Darlington transistor. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 08:52