NPN transistor MJ10005, 20A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 450V

NPN transistor MJ10005, 20A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 450V

Quantity
Unit price
1-4
5.28$
5-9
4.67$
10-24
4.32$
25+
4.02$
Obsolete product, soon to be removed from the catalog
Out of stock

NPN transistor MJ10005, 20A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 450V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 450V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 2.5pF. Darlington transistor?: yes. FT: kHz. Ic(pulse): 30A. Max hFE gain: 400. Minimum hFE gain: 40. Number of terminals: 2. Operating temperature: -65...+200°C. Pd (Power Dissipation, Max): 175W. Quantity per case: 1. Saturation voltage VCE(sat): 2V. Semiconductor material: silicon. Spec info: Q1 BE 100 Ohms, Q2 BE 15 Ohms. Tf(max): 0.6us. Type of transistor: NPN. Vcbo: 650V. Vebo: 8V. Original product from manufacturer: Mospec Semiconductor Corp. Quantity in stock updated on 11/07/2025, 22:43

Technical documentation (PDF)
MJ10005
25 parameters
Collector current
20A
Housing
TO-3 ( TO-204 )
Housing (according to data sheet)
TO-3 ( TO–204AE )
Collector/emitter voltage Vceo
450V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
2.5pF
Darlington transistor?
yes
FT
kHz
Ic(pulse)
30A
Max hFE gain
400
Minimum hFE gain
40
Number of terminals
2
Operating temperature
-65...+200°C
Pd (Power Dissipation, Max)
175W
Quantity per case
1
Saturation voltage VCE(sat)
2V
Semiconductor material
silicon
Spec info
Q1 BE 100 Ohms, Q2 BE 15 Ohms
Tf(max)
0.6us
Type of transistor
NPN
Vcbo
650V
Vebo
8V
Original product from manufacturer
Mospec Semiconductor Corp.