NPN-Transistor KTB778, 10A, TO-3PF (SOT399, 2-16E3A), TO-3P ( H ) IS, 120V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3P ( H ) IS. Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Conditioning unit: 30. Conditioning: plastic tube. Cost): 280pF. FT: 10 MHz. Function: High Power Audio Amplifier. Marking on the case: B778. Max hFE gain: 160. Minimum hFE gain: 55. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. Quantity per case: 1. Saturation voltage VCE(sat): 2.5V. Semiconductor material: silicon. Spec info: complementary transistor (pair) KTD998. Temperature: +150°C. Type of transistor: PNP. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: Korea Electronics Semi. Quantity in stock updated on 10/31/2025, 09:27