NPN-Transistor KTA1663, 1.5A, SOT-89, SOT-89, 30 v
Quantity
Unit price
1-4
0.50$
5-24
0.41$
25-49
0.36$
50-99
0.32$
100+
0.26$
| Quantity in stock: 32 |
NPN-Transistor KTA1663, 1.5A, SOT-89, SOT-89, 30 v. Collector current: 1.5A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 30 v. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 50pF. FT: 120 MHz. Function: general purpose. Max hFE gain: 320. Maximum saturation voltage VCE(sat): 2V. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 1W. Quantity per case: 1. Semiconductor material: silicon. Technology: 'Epitaxial Planar PNP Transistor'. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V. Original product from manufacturer: Korea Electronics Semi. Quantity in stock updated on 10/31/2025, 07:35
KTA1663
21 parameters
Collector current
1.5A
Housing
SOT-89
Housing (according to data sheet)
SOT-89
Collector/emitter voltage Vceo
30 v
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Cost)
50pF
FT
120 MHz
Function
general purpose
Max hFE gain
320
Maximum saturation voltage VCE(sat)
2V
Minimum hFE gain
100
Pd (Power Dissipation, Max)
1W
Quantity per case
1
Semiconductor material
silicon
Technology
'Epitaxial Planar PNP Transistor'
Type of transistor
PNP
Vcbo
30 v
Vebo
5V
Original product from manufacturer
Korea Electronics Semi.