NPN transistor KSC5027F-R, 3A, TO-220FP, TO-220F, 800V

NPN transistor KSC5027F-R, 3A, TO-220FP, TO-220F, 800V

Quantity
Unit price
1-4
3.65$
5-24
3.21$
25-49
2.91$
50+
2.71$
Obsolete product, soon to be removed from the catalog
Out of stock
Equivalence available

NPN transistor KSC5027F-R, 3A, TO-220FP, TO-220F, 800V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 800V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: yes. Cost): 60pF. FT: 15 MHz. Function: High Speed ​​Switching. Ic(pulse): 10A. Max hFE gain: 30. Maximum saturation voltage VCE(sat): 2V. Minimum hFE gain: 15. Number of terminals: 3. Operating temperature: 0...+150°C. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. Semiconductor material: silicon. Temperature: +150°C. Tf(max): 0.3us. Tf(min): 0.5us. Type of transistor: NPN. Vcbo: 1100V. Vebo: 7V. Original product from manufacturer: Fairchild. Quantity in stock updated on 11/07/2025, 22:43

Technical documentation (PDF)
KSC5027F-R
26 parameters
Collector current
3A
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Collector/emitter voltage Vceo
800V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
yes
Cost)
60pF
FT
15 MHz
Function
High Speed ​​Switching
Ic(pulse)
10A
Max hFE gain
30
Maximum saturation voltage VCE(sat)
2V
Minimum hFE gain
15
Number of terminals
3
Operating temperature
0...+150°C
Pd (Power Dissipation, Max)
40W
Quantity per case
1
Semiconductor material
silicon
Temperature
+150°C
Tf(max)
0.3us
Tf(min)
0.5us
Type of transistor
NPN
Vcbo
1100V
Vebo
7V
Original product from manufacturer
Fairchild

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