NPN transistor KSC2310-Y, 0.05A, TO-92, TO-92L (9mm magas), 150V
Quantity
Unit price
1-4
0.69$
5-24
0.56$
25-49
0.49$
50-99
0.44$
100+
0.38$
| Quantity in stock: 31 |
NPN transistor KSC2310-Y, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Collector/emitter voltage Vceo: 150V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 3.5pF. FT: 100 MHz. Marking on the case: C2310 Y. Max hFE gain: 240. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 120. Pd (Power Dissipation, Max): 0.8W. Quantity per case: 1. RoHS: no. Semiconductor material: silicon. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 200V. Vebo: 5V. Original product from manufacturer: Fairchild. Quantity in stock updated on 11/07/2025, 22:43
KSC2310-Y
22 parameters
Collector current
0.05A
Housing
TO-92
Housing (according to data sheet)
TO-92L (9mm magas)
Collector/emitter voltage Vceo
150V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
3.5pF
FT
100 MHz
Marking on the case
C2310 Y
Max hFE gain
240
Maximum saturation voltage VCE(sat)
0.5V
Minimum hFE gain
120
Pd (Power Dissipation, Max)
0.8W
Quantity per case
1
RoHS
no
Semiconductor material
silicon
Technology
'Epitaxial Silicon Transistor'
Type of transistor
NPN
Vcbo
200V
Vebo
5V
Original product from manufacturer
Fairchild