NPN transistor FJN3302R, 100mA, TO-92, TO-92, 50V
Quantity
Unit price
1-4
0.46$
5-24
0.35$
25-49
0.31$
50+
0.28$
| Quantity in stock: 20 |
NPN transistor FJN3302R, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. FT: 250 MHz. Function: switching circuits. Ic(pulse): 300mA. Minimum hFE gain: 30. Number of terminals: 3. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: SAMSUNG 0504-000117. Technology: 'Epitaxial Silicon Transistor'. Temperature: +150°C. Type of transistor: NPN. Vcbo: 50V. Vebo: 10V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:27
FJN3302R
21 parameters
Collector current
100mA
Housing
TO-92
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
50V
Assembly/installation
PCB through-hole mounting
FT
250 MHz
Function
switching circuits
Ic(pulse)
300mA
Minimum hFE gain
30
Number of terminals
3
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
SAMSUNG 0504-000117
Technology
'Epitaxial Silicon Transistor'
Temperature
+150°C
Type of transistor
NPN
Vcbo
50V
Vebo
10V
Original product from manufacturer
Fairchild