NPN transistor ESM3030DV, ISOPLUS247 ( TO-247 ), 100A, 100A, ISOTOP ( SOT-227 ), 400V

NPN transistor ESM3030DV, ISOPLUS247 ( TO-247 ), 100A, 100A, ISOTOP ( SOT-227 ), 400V

Quantity
Unit price
1-1
33.77$
2-4
32.87$
5-9
32.42$
10-19
32.05$
20+
31.48$
Quantity in stock: 22

NPN transistor ESM3030DV, ISOPLUS247 ( TO-247 ), 100A, 100A, ISOTOP ( SOT-227 ), 400V. Housing: ISOPLUS247 ( TO-247 ). Collector current Ic [A], max.: 100A. Collector current: 100A. Housing (according to data sheet): ISOTOP ( SOT-227 ). Collector/emitter voltage Vceo: 400V. Assembly/installation: PCB through-hole mounting. Collector-emitter voltage Uceo [V]: 300V. Component family: Darlington NPN Power Transistor. Configuration: Screwed. Cutoff frequency ft [MHz]: -. Darlington transistor?: yes. FT: kHz. Function: Power Darlington NPN Transistor Module. Housing (JEDEC standard): -. Ic(pulse): 150A. Manufacturer's marking: ESM3030DV. Max hFE gain: 300. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 225W. Minimum hFE gain: 300. Note: Screwed. Number of terminals: 4. Number of terminals: 4. Pd (Power Dissipation, Max): 225W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.25V. Semiconductor material: silicon. Spec info: Single Dual Emitter. Temperature: +150°C. Tf(max): 0.6us. Tf(min): 0.35us. Type of transistor: NPN & NPN. Vcbo: 300V. Vebo: 7V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/07/2025, 22:43

Technical documentation (PDF)
ESM3030DV
34 parameters
Housing
ISOPLUS247 ( TO-247 )
Collector current Ic [A], max.
100A
Collector current
100A
Housing (according to data sheet)
ISOTOP ( SOT-227 )
Collector/emitter voltage Vceo
400V
Assembly/installation
PCB through-hole mounting
Collector-emitter voltage Uceo [V]
300V
Component family
Darlington NPN Power Transistor
Configuration
Screwed
Darlington transistor?
yes
FT
kHz
Function
Power Darlington NPN Transistor Module
Ic(pulse)
150A
Manufacturer's marking
ESM3030DV
Max hFE gain
300
Max temperature
+150°C.
Maximum dissipation Ptot [W]
225W
Minimum hFE gain
300
Note
Screwed
Number of terminals
4
Number of terminals
4
Pd (Power Dissipation, Max)
225W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1.25V
Semiconductor material
silicon
Spec info
Single Dual Emitter
Temperature
+150°C
Tf(max)
0.6us
Tf(min)
0.35us
Type of transistor
NPN & NPN
Vcbo
300V
Vebo
7V
Original product from manufacturer
Stmicroelectronics