NPN-Transistor D45H11, 10A, TO-220, TO-220AB, 80V

NPN-Transistor D45H11, 10A, TO-220, TO-220AB, 80V

Quantity
Unit price
1-4
1.36$
5-24
1.13$
25-49
1.01$
50-99
0.93$
100+
0.81$
Quantity in stock: 69

NPN-Transistor D45H11, 10A, TO-220, TO-220AB, 80V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Equivalents: Fairchild--D45H11TU, KSE45H11TU, ON Semi. FT: 40 MHz. Ic(pulse): 20A. Max hFE gain: 60. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 40. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: pair D44H11. Tf(max): 100 ns. Tf(min): 100 ns. Type of transistor: PNP. Vcbo: 80V. Vebo: 5V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:55

Technical documentation (PDF)
D45H11
26 parameters
Collector current
10A
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Equivalents
Fairchild--D45H11TU, KSE45H11TU, ON Semi
FT
40 MHz
Ic(pulse)
20A
Max hFE gain
60
Maximum saturation voltage VCE(sat)
1V
Minimum hFE gain
40
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
pair D44H11
Tf(max)
100 ns
Tf(min)
100 ns
Type of transistor
PNP
Vcbo
80V
Vebo
5V
Original product from manufacturer
Stmicroelectronics