NPN transistor D44H11, 10A, TO-220, TO-220, 80V

NPN transistor D44H11, 10A, TO-220, TO-220, 80V

Quantity
Unit price
1-4
1.74$
5-24
1.51$
25-49
1.36$
50-99
1.24$
100+
1.06$
Equivalence available
Quantity in stock: 90

NPN transistor D44H11, 10A, TO-220, TO-220, 80V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: yes. Cost): 130pF. Equivalents: Fairchild D44H11TU, KSE44H11TU. FT: 50 MHz. Function: -. Ic(pulse): 20A. Marking on the case: D44H11. Minimum hFE gain: 60. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) D45H11. Technology: 'Epitaxial Silicon Transistor'. Temperature: +150°C. Tf(max): 140 ns. Tf(min): 140 ns. Type of transistor: NPN. Vcbo: 80V. Vebo: 5V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/07/2025, 22:43

Technical documentation (PDF)
D44H11
29 parameters
Collector current
10A
Housing
TO-220
Housing (according to data sheet)
TO-220
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
yes
Cost)
130pF
Equivalents
Fairchild D44H11TU, KSE44H11TU
FT
50 MHz
Ic(pulse)
20A
Marking on the case
D44H11
Minimum hFE gain
60
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1V
Semiconductor material
silicon
Spec info
complementary transistor (pair) D45H11
Technology
'Epitaxial Silicon Transistor'
Temperature
+150°C
Tf(max)
140 ns
Tf(min)
140 ns
Type of transistor
NPN
Vcbo
80V
Vebo
5V
Original product from manufacturer
Stmicroelectronics

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