| Quantity in stock: 102 |
NPN transistor BUX85, TO-220, 2A, 2A, TO-220, 450V
Quantity
Unit price
1-4
1.00$
5-24
0.84$
25-49
0.74$
50-99
0.66$
100+
0.55$
| +115 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Equivalence available | |
| Quantity in stock: 74 |
NPN transistor BUX85, TO-220, 2A, 2A, TO-220, 450V. Housing: TO-220. Collector current Ic [A], max.: 2A. Collector current: 2A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 2A. Collector-emitter voltage Uceo [V]: 450V. Component family: high voltage NPN transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 4 MHz. FT: 4 MHz. Function: S-L. Housing (JEDEC standard): TO-220. Ic(pulse): 3A. Manufacturer's marking: BUX85G. Max hFE gain: 50. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 50W. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 30. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Polarity: bipolar. Power: 40W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.8V. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 1000V. Voltage (collector - emitter): 1kV. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 11/07/2025, 22:43
BUX85
36 parameters
Housing
TO-220
Collector current Ic [A], max.
2A
Collector current
2A
Housing (according to data sheet)
TO-220
Collector/emitter voltage Vceo
450V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector current Ic [A]
2A
Collector-emitter voltage Uceo [V]
450V
Component family
high voltage NPN transistor
Conditioning
tubus
Configuration
PCB through-hole mounting
Cutoff frequency ft [MHz]
4 MHz
FT
4 MHz
Function
S-L
Housing (JEDEC standard)
TO-220
Ic(pulse)
3A
Manufacturer's marking
BUX85G
Max hFE gain
50
Max temperature
+150°C.
Maximum dissipation Ptot [W]
50W
Maximum saturation voltage VCE(sat)
1V
Minimum hFE gain
30
Number of terminals
3
Pd (Power Dissipation, Max)
50W
Polarity
bipolar
Power
40W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.8V
Semiconductor material
silicon
Type of transistor
NPN
Vcbo
1000V
Voltage (collector - emitter)
1kV
Original product from manufacturer
ON Semiconductor