| Quantity in stock: 17 |
NPN transistor BUT11A, TO-220, 450V, 5A, TO-220, 450V
Quantity
Unit price
1-4
1.56$
5-24
1.35$
25-49
1.14$
50+
1.05$
| +175 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Obsolete product, soon to be removed from the catalog. Last items available | |
| Equivalence available | |
| Quantity in stock: 33 |
NPN transistor BUT11A, TO-220, 450V, 5A, TO-220, 450V. Housing: TO-220. Collector-Emitter Voltage VCEO: 450V. Collector current: 5A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Applications: switching. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector-Base Voltage VCBO: 1000V. Current Max 1: 5A. DC Collector/Base Gain hFE min.: 10. FT: kHz. Function: High voltage fast switching. Ic(pulse): 10A. Information: -. MSL: -. Max hFE gain: 35. Minimum hFE gain: 10. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Pd (Power Dissipation, Max): 83W. Polarity: NPN. Power: 100W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.3V. Semiconductor material: silicon. Series: BUT11. Temperature: +150°C. Tf(max): 4us. Tf(min): 0.8us. Type of transistor: NPN. Type: Switching. Vcbo: 1000V. Vebo: 9V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/07/2025, 22:43
BUT11A
35 parameters
Housing
TO-220
Collector-Emitter Voltage VCEO
450V
Collector current
5A
Housing (according to data sheet)
TO-220
Collector/emitter voltage Vceo
450V
Applications
switching
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector-Base Voltage VCBO
1000V
Current Max 1
5A
DC Collector/Base Gain hFE min.
10
FT
kHz
Function
High voltage fast switching
Ic(pulse)
10A
Max hFE gain
35
Minimum hFE gain
10
Mounting Type
PCB through-hole mounting
Number of terminals
3
Pd (Power Dissipation, Max)
83W
Polarity
NPN
Power
100W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1.3V
Semiconductor material
silicon
Series
BUT11
Temperature
+150°C
Tf(max)
4us
Tf(min)
0.8us
Type of transistor
NPN
Type
Switching
Vcbo
1000V
Vebo
9V
Original product from manufacturer
Stmicroelectronics