| +1 quickly | |
| Quantity in stock: 485 |
NPN transistor BUL45GD2G, 5A, TO-220, TO220AB CASE 221A-09, 400V
Quantity
Unit price
1-4
2.15$
5-9
1.89$
10-24
1.74$
25-49
1.63$
50+
1.44$
| Equivalence available | |
| Quantity in stock: 51 |
NPN transistor BUL45GD2G, 5A, TO-220, TO220AB CASE 221A-09, 400V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO220AB CASE 221A-09. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes. Cost): 50pF. FT: 13 MHz. Function: High-speed, high-gain, bipolar NPN power transistor. Ic(pulse): 10A. Max hFE gain: 34. Maximum saturation voltage VCE(sat): 0.4V. Minimum hFE gain: 22. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.28V. Semiconductor material: silicon. Spec info: Built-in Efficient Antisaturation Network. Type of transistor: NPN. Vcbo: 700V. Vebo: 12V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 11/07/2025, 22:43
BUL45GD2G
23 parameters
Collector current
5A
Housing
TO-220
Housing (according to data sheet)
TO220AB CASE 221A-09
Collector/emitter voltage Vceo
400V
BE diode
no
CE diode
yes
Cost)
50pF
FT
13 MHz
Function
High-speed, high-gain, bipolar NPN power transistor
Ic(pulse)
10A
Max hFE gain
34
Maximum saturation voltage VCE(sat)
0.4V
Minimum hFE gain
22
Pd (Power Dissipation, Max)
75W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.28V
Semiconductor material
silicon
Spec info
Built-in Efficient Antisaturation Network
Type of transistor
NPN
Vcbo
700V
Vebo
12V
Original product from manufacturer
ON Semiconductor