| Quantity in stock: 79 |
NPN transistor BU808DFX, 8A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 700V
Quantity
Unit price
1-4
7.84$
5-9
7.18$
10-24
6.56$
25-49
6.16$
50+
5.47$
| Equivalence available | |
| Quantity in stock: 7 |
NPN transistor BU808DFX, 8A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 700V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 700V. Assembly/installation: PCB through-hole mounting. BE resistor: 42 Ohms. Darlington transistor?: yes. FT: kHz. Ic(pulse): 10A. Max hFE gain: 230. Minimum hFE gain: 60. Number of terminals: 2. Pd (Power Dissipation, Max): 62W. Quantity per case: 2. RoHS: yes. Saturation voltage VCE(sat): 1.6V. Semiconductor material: silicon. Spec info: ICM--(tp < 5ms). Temperature: +150°C. Tf(max): 0.8us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1400V. Vebo: 5V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14
BU808DFX
25 parameters
Collector current
8A
Housing
TO-3PF (SOT399, 2-16E3A)
Housing (according to data sheet)
ISOWATT218FX
Collector/emitter voltage Vceo
700V
Assembly/installation
PCB through-hole mounting
BE resistor
42 Ohms
Darlington transistor?
yes
FT
kHz
Ic(pulse)
10A
Max hFE gain
230
Minimum hFE gain
60
Number of terminals
2
Pd (Power Dissipation, Max)
62W
Quantity per case
2
RoHS
yes
Saturation voltage VCE(sat)
1.6V
Semiconductor material
silicon
Spec info
ICM--(tp < 5ms)
Temperature
+150°C
Tf(max)
0.8us
Tf(min)
0.2us
Type of transistor
NPN
Vcbo
1400V
Vebo
5V
Original product from manufacturer
Stmicroelectronics