NPN transistor BU2520DF-PHI, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Assembly/installation: PCB through-hole mounting. FT: kHz. Function: High-voltage, high-speed switching. Ic(pulse): 25A. Max hFE gain: 13. Minimum hFE gain: 5. Note: Insulation voltage 2500V. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. Saturation voltage VCE(sat): 5V. Semiconductor material: silicon. Spec info: Switching times (16kHz line deflection circuit). Technology: Power Transistor. Temperature: +150°C. Tf(max): 0.5us. Tf(min): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Vebo: 13.5V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 11/06/2025, 22:14