NPN transistor BSR51, 1A, TO-92, TO-92 ( SOT-54 ), 60V

NPN transistor BSR51, 1A, TO-92, TO-92 ( SOT-54 ), 60V

Quantity
Unit price
1-4
0.83$
5-24
0.72$
25-49
0.65$
50-99
0.58$
100+
0.47$
Quantity in stock: 19

NPN transistor BSR51, 1A, TO-92, TO-92 ( SOT-54 ), 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( SOT-54 ). Collector/emitter voltage Vceo: 60V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: yes. Darlington transistor?: yes. FT: 200 MHz. Ic(pulse): 2A. Max hFE gain: 2000. Maximum saturation voltage VCE(sat): 1.3V. Minimum hFE gain: 1000. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.83W. Quantity per case: 1. Semiconductor material: silicon. Tf(max): 1300 ns. Tf(min): 500 ns. Type of transistor: NPN. Vcbo: 80V. Vebo: 5V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
BSR51
24 parameters
Collector current
1A
Housing
TO-92
Housing (according to data sheet)
TO-92 ( SOT-54 )
Collector/emitter voltage Vceo
60V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
yes
Darlington transistor?
yes
FT
200 MHz
Ic(pulse)
2A
Max hFE gain
2000
Maximum saturation voltage VCE(sat)
1.3V
Minimum hFE gain
1000
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
0.83W
Quantity per case
1
Semiconductor material
silicon
Tf(max)
1300 ns
Tf(min)
500 ns
Type of transistor
NPN
Vcbo
80V
Vebo
5V
Original product from manufacturer
Philips Semiconductors