NPN transistor BSR43TA, 1A, SOT-89, SOT89, 80V

NPN transistor BSR43TA, 1A, SOT-89, SOT89, 80V

Quantity
Unit price
1-4
0.45$
5-49
0.38$
50-99
0.33$
100-199
0.29$
200+
0.23$
Quantity in stock: 589

NPN transistor BSR43TA, 1A, SOT-89, SOT89, 80V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT89. Collector/emitter voltage Vceo: 80V. Assembly/installation: surface-mounted component (SMD). BE diode: no. C(in): 90pF. CE diode: no. Cost): 12pF. FT: 100 MHz. Function: Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules. Ic(pulse): 2A. Marking on the case: AR4. Max hFE gain: 300. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 35. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 1W. Quantity per case: 1. Saturation voltage VCE(sat): 0.25V. Semiconductor material: silicon. Spec info: screen printing/SMD code AR4. Tf (type): 1000 ns. Tr: 250 ns. Type of transistor: NPN. Vcbo: 90V. Vebo: 5V. Original product from manufacturer: Diodes Inc. Quantity in stock updated on 11/06/2025, 22:14

BSR43TA
28 parameters
Collector current
1A
Housing
SOT-89
Housing (according to data sheet)
SOT89
Collector/emitter voltage Vceo
80V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
C(in)
90pF
CE diode
no
Cost)
12pF
FT
100 MHz
Function
Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules
Ic(pulse)
2A
Marking on the case
AR4
Max hFE gain
300
Maximum saturation voltage VCE(sat)
0.5V
Minimum hFE gain
35
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
1W
Quantity per case
1
Saturation voltage VCE(sat)
0.25V
Semiconductor material
silicon
Spec info
screen printing/SMD code AR4
Tf (type)
1000 ns
Tr
250 ns
Type of transistor
NPN
Vcbo
90V
Vebo
5V
Original product from manufacturer
Diodes Inc.