NPN-Transistor BSP60-115, 1A, SOT-223 ( TO-226 ), SOT-223, 45V

NPN-Transistor BSP60-115, 1A, SOT-223 ( TO-226 ), SOT-223, 45V

Quantity
Unit price
1-4
0.44$
5-49
0.36$
50-99
0.31$
100-199
0.28$
200+
0.24$
Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 192

NPN-Transistor BSP60-115, 1A, SOT-223 ( TO-226 ), SOT-223, 45V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 45V. Assembly/installation: surface-mounted component (SMD). BE diode: no. BE resistor: 150 Ohms. CE diode: yes. Darlington transistor?: yes. FT: 200 MHz. Function: high DC Current, Relay drivers, Lamp drivers. Ic(pulse): 2A. Max hFE gain: 2000. Maximum saturation voltage VCE(sat): 1.3V. Minimum hFE gain: 1000. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 1.25W. Quantity per case: 1. Semiconductor material: silicon. Spec info: complementary transistor (pair) BSP50. Type of transistor: PNP. Vcbo: 60V. Vebo: 5V. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 10/31/2025, 07:40

Technical documentation (PDF)
BSP60-115
24 parameters
Collector current
1A
Housing
SOT-223 ( TO-226 )
Housing (according to data sheet)
SOT-223
Collector/emitter voltage Vceo
45V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
BE resistor
150 Ohms
CE diode
yes
Darlington transistor?
yes
FT
200 MHz
Function
high DC Current, Relay drivers, Lamp drivers
Ic(pulse)
2A
Max hFE gain
2000
Maximum saturation voltage VCE(sat)
1.3V
Minimum hFE gain
1000
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
1.25W
Quantity per case
1
Semiconductor material
silicon
Spec info
complementary transistor (pair) BSP50
Type of transistor
PNP
Vcbo
60V
Vebo
5V
Original product from manufacturer
Nxp Semiconductors