NPN transistor BFW92A, TO-50, 25mA, 0.025A, TO-50-3, 25V. Housing: TO-50. Collector current Ic [A], max.: 25mA. Collector current: 0.025A. Housing (according to data sheet): TO-50-3. Collector/emitter voltage Vceo: 25V. Assembly/installation: PCB through-hole mounting. Collector-emitter voltage Uceo [V]: 15V. Component family: high frequency NPN transistor. Configuration: surface-mounted component (SMD). Cutoff frequency ft [MHz]: 3.2GHz. Darlington transistor?: no. FT: 3.2GHz. Function: Wide band RF amplifier up to GHz range.. Housing (JEDEC standard): -. Manufacturer's marking: BFW92A. Max hFE gain: 150. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.3W. Minimum hFE gain: 20. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Quantity per case: 1. RoHS: no. Saturation voltage VCE(sat): 0.1V. Semiconductor material: silicon. Spec info: 'Planar RF Transistor'. Temperature: +150°C. Type of transistor: NPN. Vcbo: 25V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14