NPN transistor BFS20, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V

NPN transistor BFS20, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V

Quantity
Unit price
10-49
0.0752$
50-99
0.0671$
100+
0.0590$
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Quantity in stock: 194
Minimum: 10

NPN transistor BFS20, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V. Collector current: 25mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 20V. Assembly/installation: surface-mounted component (SMD). FT: 450 MHz. Function: 'IF and VHF thick and thin-film circuit'. Ic(pulse): 25mA. Marking on the case: G1*. Max hFE gain: 140. Minimum hFE gain: 40. Note: screen printing/SMD code G1p, G1t, G1W. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 200mW. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 30 v. Vebo: 4 v. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 13:31

Technical documentation (PDF)
BFS20
23 parameters
Collector current
25mA
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23 ( TO236 )
Collector/emitter voltage Vceo
20V
Assembly/installation
surface-mounted component (SMD)
FT
450 MHz
Function
'IF and VHF thick and thin-film circuit'
Ic(pulse)
25mA
Marking on the case
G1*
Max hFE gain
140
Minimum hFE gain
40
Note
screen printing/SMD code G1p, G1t, G1W
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
200mW
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Type of transistor
NPN
Vcbo
30 v
Vebo
4 v
Original product from manufacturer
Diodes Inc
Minimum quantity
10