NPN transistor BFR93A, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V

NPN transistor BFR93A, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V

Quantity
Unit price
1-4
0.23$
5-49
0.16$
50-99
0.15$
100+
0.13$
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Quantity in stock: 1660

NPN transistor BFR93A, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V. Collector current: 35mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 12V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Conditioning unit: 3000. Conditioning: roll. FT: 6GHz. Function: UHF-A, RF wideband amplifiers and oscillators.. Marking on the case: R2. Max hFE gain: 90. Minimum hFE gain: 40. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.3W. Quantity per case: 1. Semiconductor material: silicon. Spec info: SMD R2. Type of transistor: NPN. Vcbo: 15V. Vebo: 2V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
BFR93A
24 parameters
Collector current
35mA
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23 ( TO236 )
Collector/emitter voltage Vceo
12V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Conditioning unit
3000
Conditioning
roll
FT
6GHz
Function
UHF-A, RF wideband amplifiers and oscillators.
Marking on the case
R2
Max hFE gain
90
Minimum hFE gain
40
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
0.3W
Quantity per case
1
Semiconductor material
silicon
Spec info
SMD R2
Type of transistor
NPN
Vcbo
15V
Vebo
2V
Original product from manufacturer
Philips Semiconductors