NPN transistor BFP193E6327, 80mA, SOT-143, SOT-143, 12V

NPN transistor BFP193E6327, 80mA, SOT-143, SOT-143, 12V

Quantity
Unit price
1-4
0.38$
5-49
0.32$
50-99
0.28$
100-199
0.25$
200+
0.21$
Quantity in stock: 65

NPN transistor BFP193E6327, 80mA, SOT-143, SOT-143, 12V. Collector current: 80mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Collector/emitter voltage Vceo: 12V. Assembly/installation: surface-mounted component (SMD). BE diode: no. C(in): 0.9pF. CE diode: no. Cost): 0.28pF. FT: 8GHz. Function: UHF wideband transistor. Marking on the case: RCs. Max hFE gain: 140. Minimum hFE gain: 70. Number of terminals: 4. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 580mW (total 380mW). Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: screen printing/SMD code RCs. Type of transistor: NPN. Vcbo: 20V. Vebo: 2V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
BFP193E6327
25 parameters
Collector current
80mA
Housing
SOT-143
Housing (according to data sheet)
SOT-143
Collector/emitter voltage Vceo
12V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
C(in)
0.9pF
CE diode
no
Cost)
0.28pF
FT
8GHz
Function
UHF wideband transistor
Marking on the case
RCs
Max hFE gain
140
Minimum hFE gain
70
Number of terminals
4
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
580mW (total 380mW)
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
screen printing/SMD code RCs
Type of transistor
NPN
Vcbo
20V
Vebo
2V
Original product from manufacturer
Infineon Technologies