NPN-Transistor BF450, TO-92, TO-226AA, 40V, 25mA, 25mA, TO-92 ( SOT-54 ), 40V

NPN-Transistor BF450, TO-92, TO-226AA, 40V, 25mA, 25mA, TO-92 ( SOT-54 ), 40V

Quantity
Unit price
1-4
0.18$
5-49
0.15$
50-99
0.13$
100-199
0.12$
200+
0.10$
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Quantity in stock: 121

NPN-Transistor BF450, TO-92, TO-226AA, 40V, 25mA, 25mA, TO-92 ( SOT-54 ), 40V. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 25mA. Collector current: 25mA. Housing (according to data sheet): TO-92 ( SOT-54 ). Collector/emitter voltage Vceo: 40V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Component family: NPN transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 350 MHz. FT: 350MHz. Function: HF and IF stages in radio receivers. Ic(pulse): 25mA. Manufacturer's marking: BF450. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.3W. Minimum hFE gain: 50. Number of terminals: 3. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 300mW. Quantity per case: 1. RoHS: no. Semiconductor material: silicon. Spec info: feedback capacitance--0.45pF. Type of transistor: PNP. Vcbo: 40V. Vebo: 4 v. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 10/31/2025, 07:40

Technical documentation (PDF)
BF450
32 parameters
Housing
TO-92
Housing (JEDEC standard)
TO-226AA
Collector-emitter voltage Uceo [V]
40V
Collector current Ic [A], max.
25mA
Collector current
25mA
Housing (according to data sheet)
TO-92 ( SOT-54 )
Collector/emitter voltage Vceo
40V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Component family
NPN transistor
Configuration
PCB through-hole mounting
Cutoff frequency ft [MHz]
350 MHz
FT
350MHz
Function
HF and IF stages in radio receivers
Ic(pulse)
25mA
Manufacturer's marking
BF450
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.3W
Minimum hFE gain
50
Number of terminals
3
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
300mW
Quantity per case
1
RoHS
no
Semiconductor material
silicon
Spec info
feedback capacitance--0.45pF
Type of transistor
PNP
Vcbo
40V
Vebo
4 v
Original product from manufacturer
Philips Semiconductors

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