NPN transistor BDX53C, TO-220, 100V, 8A, 8A, TO-220AB, 100V

NPN transistor BDX53C, TO-220, 100V, 8A, 8A, TO-220AB, 100V

Quantity
Unit price
1-4
0.64$
5-24
0.53$
25-49
0.46$
50-99
0.42$
100+
0.36$
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Quantity in stock: 85

NPN transistor BDX53C, TO-220, 100V, 8A, 8A, TO-220AB, 100V. Housing: TO-220. Collector-Emitter Voltage VCEO: 100V. Collector current Ic [A], max.: 8A. Collector current: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: 150 Ohms. CE diode: yes. Collector current Ic [A]: 8A. Collector-Base Voltage VCBO: 100V. Collector-emitter voltage Uceo [V]: 100V. Component family: Darlington NPN Power Transistor. Conditioning unit: 50. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: 8A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 750. Darlington transistor?: yes. FT: 20 MHz. Function: audio amplifier. Gain hfe: 750. Housing (JEDEC standard): TO-220AB. Ic(pulse): 12A. Information: -. MSL: -. Manufacturer's marking: BDX53C. Max frequency: 20MHz. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 60W. Minimum hFE gain: 750. Mounting Type: PCB through-hole mounting. Note: complementary transistor (pair) BDX54C. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Polarity: bipolar. Power: 60W. Quantity per case: 1. Resistor B: 10k Ohms. RoHS: yes. Saturation voltage VCE(sat): 2V. Semiconductor material: silicon. Series: BDX53. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Technology: Complementary power Darlington transistors. Temperature: +150°C. Type of transistor: NPN. Type: Darlington transistor. Vcbo: 100V. Vebo: 5V. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
BDX53C
52 parameters
Housing
TO-220
Collector-Emitter Voltage VCEO
100V
Collector current Ic [A], max.
8A
Collector current
8A
Housing (according to data sheet)
TO-220AB
Collector/emitter voltage Vceo
100V
Assembly/installation
PCB through-hole mounting
BE diode
no
BE resistor
150 Ohms
CE diode
yes
Collector current Ic [A]
8A
Collector-Base Voltage VCBO
100V
Collector-emitter voltage Uceo [V]
100V
Component family
Darlington NPN Power Transistor
Conditioning unit
50
Conditioning
tubus
Configuration
PCB through-hole mounting
Current Max 1
8A
DC Collector/Base Gain hFE min.
750
Darlington transistor?
yes
FT
20 MHz
Function
audio amplifier
Gain hfe
750
Housing (JEDEC standard)
TO-220AB
Ic(pulse)
12A
Manufacturer's marking
BDX53C
Max frequency
20MHz
Max temperature
+150°C.
Maximum dissipation Ptot [W]
60W
Minimum hFE gain
750
Mounting Type
PCB through-hole mounting
Note
complementary transistor (pair) BDX54C
Number of terminals
3
Number of terminals
3
Pd (Power Dissipation, Max)
60W
Polarity
bipolar
Power
60W
Quantity per case
1
Resistor B
10k Ohms
RoHS
yes
Saturation voltage VCE(sat)
2V
Semiconductor material
silicon
Series
BDX53
Spec info
R1 typ.=10k Ohms, R2 typ.=150 Ohms
Technology
Complementary power Darlington transistors
Temperature
+150°C
Type of transistor
NPN
Type
Darlington transistor
Vcbo
100V
Vebo
5V
Voltage (collector - emitter)
100V
Original product from manufacturer
Stmicroelectronics