NPN-Transistor BDX34C, TO-220, -100V, 10A, TO-220AB, 100V. Housing: TO-220. Collector-Emitter Voltage VCEO: -100V. Collector current: 10A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: 150 Ohms. Built-in diode: yes. CE diode: yes. Collector current Ic [A]: 10A. Collector-Base Voltage VCBO: -100V. Conditioning: tubus. Current Max 1: -10A. DC Collector/Base Gain hFE min.: 750. Darlington transistor?: yes. FT: 20 MHz. Function: 10k Ohms (R1), 150 Ohms (R2). Ic(pulse): 15A. Information: -. MSL: -. Max frequency: 20MHz. Max hFE gain: 750. Minimum hFE gain: 100. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. Polarity: bipolar. Power: 70W. Quantity per case: 2. Resistor B: 10k Ohms. RoHS: yes. Saturation voltage VCE(sat): 2.5V. Semiconductor material: silicon. Series: BDX34C. Spec info: complementary transistor (pair) BDX33C. Temperature: +150°C. Type of transistor: PNP. Type: Darlington transistor. Vcbo: 100V. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 07:40