NPN transistor BDX33C, TO-220, 100V, 10A, 10A, TO-220AB, 100V. Housing: TO-220. Collector-Emitter Voltage VCEO: 100V. Collector current Ic [A], max.: 10A. Collector current: 10A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: 150 Ohms. Built-in diode: yes. CE diode: yes. Collector current Ic [A]: 10A. Collector-Base Voltage VCBO: 100V. Collector-emitter voltage Uceo [V]: 100V. Component family: Darlington NPN Power Transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: 10A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 750. Darlington transistor?: yes. FT: 20 MHz. Function: 10k Ohms (R1), 150 Ohms (R2). Gain hfe: 750. Housing (JEDEC standard): TO-220. Ic(pulse): 15A. Information: -. MSL: -. Manufacturer's marking: BDX33C. Max frequency: 20MHz. Max hFE gain: 750. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 70W. Minimum hFE gain: 100. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. Polarity: bipolar. Power: 70W. Quantity per case: 2. Resistor B: 10k Ohms. RoHS: yes. Saturation voltage VCE(sat): 2.5V. Semiconductor material: silicon. Series: BDX33. Spec info: complementary transistor (pair) BDX34C. Temperature: +150°C. Type of transistor: NPN. Type: Darlington transistor. Vcbo: 100V. Vebo: 2.5V. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14