NPN transistor BDW93C, TO-220, 100V, 12A, 12A, TO-220AB, 100V. Housing: TO-220. Collector-Emitter Voltage VCEO: 100V. Collector current Ic [A], max.: 12A. Collector current: 12A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: R1 typ.=10k Ohms, R2 typ.=150 Ohms. CE diode: yes. Collector current Ic [A]: 12A. Collector-Base Voltage VCBO: 100V. Collector-emitter voltage Uceo [V]: 100V. Component family: Darlington NPN Power Transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: 12A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 100. Darlington transistor?: yes. Dielectric structure: Darlington transistor. FT: 20 MHz. Function: complementary transistor (pair) BDW94C. Gain hfe: 750. Housing (JEDEC standard): TO-220AB. Ic(pulse): 15A. Information: -. MSL: -. Manufacturer's marking: BDW93C. Max hFE gain: 20000. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 80W. Maximum saturation voltage VCE(sat): 3V. Minimum hFE gain: 100. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. Polarity: bipolar. Power: 80W. Quantity per case: 2. RoHS: yes. Saturation voltage VCE(sat): 2V. Semiconductor material: silicon. Series: BDW93. Temperature: +150°C. Type of transistor: NPN. Type: Darlington transistor. Vcbo: 100V. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14