NPN transistor BDW83C-PMC, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 100V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. Darlington transistor?: yes. FT: 1 MHz. Max hFE gain: 20000. Minimum hFE gain: 750. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 2.5V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BDW84C. Temperature: +150°C. Tf(max): 7us. Tf(min): 0.9us. Type of transistor: NPN. Vcbo: 100V. Vebo: 5V. Original product from manufacturer: Div. Quantity in stock updated on 11/06/2025, 22:14