NPN-Transistor BDV64C-POW, 12A, TO-3P ( TO-218 SOT-93 ), SOT-93, 120V. Collector current: 12A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Darlington transistor?: yes. Ic(pulse): 15A. Minimum hFE gain: 1000. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 2V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BDV65C. Type of transistor: PNP. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: Power Integrations. Quantity in stock updated on 10/31/2025, 09:12