NPN-Transistor BDV64BG, TO-247, 100V, 10A, 10A, TO-247, 100V. Housing: TO-247. Housing (JEDEC standard): -. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Collector current: 10A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: -. Darlington transistor?: yes. Ic(pulse): 20A. Manufacturer's marking: BDV64BG. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Maximum saturation voltage VCE(sat): 2V. Minimum hFE gain: 1000. Number of terminals: 3. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: complementary transistor (pair) BDV65B. Type of transistor: PNP. Vcbo: 100V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:12